Semiconductor device having an active region formed from group III nitride

ABSTRACT

The semiconductor device of this invention includes an active region formed from a group III nitride semiconductor grown on a substrate and an insulating oxide film formed in a peripheral portion of the active region by oxidizing the group III nitride semiconductor. On the active region, a gate electrode in Schottky contact with the active region extending onto the insulating oxide film and having an extended portion on the insulating oxide film is formed, and ohmic electrodes respectively serving as a source electrode and a drain electrode are formed with space from side edges along the gate length direction of the gate electrode.

BACKGROUND OF THE INVENTION

The present invention relates to a semiconductor device including agroup III nitride semiconductor represented by a general formula,In_(x)Al_(y)Ga_(1−x−y)N (wherein 0≦x≦1, 0≦y≦1 and 0≦x+y≦1), and moreparticularly, it relates to a semiconductor device including an oxidefilm formed by oxidizing a group III nitride semiconductor and a methodof fabricating the same.

A group III nitride semiconductor having a composition ofIn_(x)Al_(y)Ga_(1-x-y)N, that is, the so-called gallium nitride-based(GaN-based) compound semiconductor, is regarded as a promising materialfor a light emitting device such as an LED and a semiconductor laserdiode because the interband transition of electrons is direct transitiontherein and its band gap is varied in a wide range between 1.95 eV and 6eV.

Recently, particularly in order to realize higher density and higherintegration of information processing equipment, semiconductor laserdiodes capable of outputting light of a wavelength in a blue-violetregion are earnestly developed. Also, since GaN has high breakdownfield, high thermal conductivity and a high electron saturationvelocity, it is a promising material also for a high frequency powerdevice. In particular, a heterojunction structure including aluminumgallium nitride (AlGaN) and gallium nitride (GaN) has an electronvelocity twice as large as that of gallium arsenide (GaAs) at highelectric field as high as 1×10⁵ V/cm to realize down sizing, and henceis expected a high frequency operation of a device.

Since a group III nitride semiconductor exhibits an n-typecharacteristic when doped with an n-type dopant including a group IVelement such as silicon (Si) and germanium (Ge), application to a fieldeffect transistor (FET) is now under development. Also, since a groupIII nitride semiconductor exhibits a p-type characteristic when dopedwith a p-type dopant including a group III element such as magnesium(Mg), barium (Ba) and calcium (Ca), application to an LED and asemiconductor laser diode including a pn-junction structure of a p-typesemiconductor and an n-type semiconductor is now under development. Asan applicable electronic device, a high electron mobility transistor(HEMT) including a heterojunction of, for example, AlGaN and GaN iswidely being examined to be realized by using a group III nitridesemiconductor having a high electron transporting property.

Now, a conventional AlGaN/GaN-based HEMT will be described withreference to drawings.

FIGS. 23A and 23B show the conventional AlGaN/GaN-based HEMT, whereinFIG. 23A shows the plane structure thereof and FIG. 23B shows thecross-sectional structure thereof taken on line XXIIIB-XXIIIB of FIG.23A. As is shown in FIGS. 23A and 23B, a first HEMT 100A and a secondHEMT 100B are formed on a substrate 101 of silicon carbide (SiC) so asto be separated by a scribe region 110, used for dividing the substrate101 into chips each including a transistor.

Each of the first HEMT 100A and the second HEMT 100B includes, on abuffer layer 102 of GaN grown on the substrate 101, an active region 103formed by mesa-etching a heterojunction layer of AlGaN/GaN.

On each active region 103, a gate electrode 104 in Schottky contact withthe active region 103 and ohmic electrodes 105, in ohmic contact withthe active region 103, disposed with space from side edges along thegate length direction of the gate electrode 104 are formed.

A portion above and around each active region 103 including the gateelectrode 104 and the ohmic electrodes 105 is entirely covered with aninsulating film 106, and pad electrodes 107 respectively electricallyconnected to the gate electrode 104 and the ohmic electrodes 105 areformed on each insulating film 106. The insulating film 106 is coveredwith a surface passivation film 108 with the pad electrodes 107 exposed.

The insulating film 106 covering the active region 103 is generallyformed from silicon oxide or the like, so as to protect the surface ofthe active region 103 and ease formation of the gate electrode 104 by alift off method.

As is shown in FIG. 23A, since it is necessary to provide the gateelectrode 104 with an extended portion 104 a to be connected to the padelectrode 107, the gate electrode 104 is formed not only on the activeregion 103 but also on the buffer layer 102 of GaN exposed by themesa-etching.

In the conventional AlGaN/GaN-based HEMT, however, contact between theextended portion 104 a and the buffer layer 102 is contact between ametal and a semiconductor, namely, the so-called Schottky contact, andhence, there is a problem that a leakage current tends to occur due todamage of the semiconductor surface caused in the mesa-etching. Thisleakage current largely affects a pinch-off characteristic of thetransistor, resulting in degrading the transistor characteristic.

Furthermore, since adhesion between the buffer layer 102 of GaN and theinsulating film 106 of silicon oxide is insufficient, there is anotherproblem that the insulating film 106 peels off in wire-bonding the padelectrodes 107 formed on the insulating film 106.

Moreover, both the substrate 101 of SiC and the GaN-based semiconductorhave high hardness, and hence, it is very difficult to conduct a scribeprocess for dividing the substrate into chips as compared with the casewhere Si and GaAs are used. Therefore, the yield may be lowered due tooccurrence of a crack reaching the active region 103 in the scribeprocess or the reliability may be lowered due to peeling of the surfacepassivation film 108 or the insulating film 106 in the vicinity of thescribe region 110.

In a semiconductor laser diode having a laser structure formed by multilayers of group III nitride semiconductors, a substrate of sapphire isgenerally used. In the case where sapphire is used as the substrate, itis difficult to form a cavity structure by cleavage because of adifference in the crystal axis between sapphire and the laser structureformed on the sapphire, and hence, the cavity structure is frequentlyformed by dry etching. When the cavity is formed by dry etching,however, a defect peculiar to the formed cavity facet is caused so as toform a non-luminescent center. As a result, there arises a problem thatthe operation current (threshold current) may increase or thereliability may be lowered.

SUMMARY OF THE INVENTION

The present invention was devised for overcoming the aforementionedconventional problems, and an object of the invention is forming aninsulating film having high adhesion to a group III nitridesemiconductor, a good electric characteristic or a good opticalcharacteristic.

In order to achieve the object, a semiconductor device including a groupIII nitride semiconductor of this invention has an oxide film formed bydirectly oxidizing the group III nitride semiconductor itself.

Specifically, the first semiconductor device of this invention comprisesan active region formed on a substrate from a group III nitridesemiconductor; and an insulating oxide film formed in a peripheralportion of the active region on the substrate by oxidizing the group IIInitride semiconductor.

The bonding strength between a group III nitride semiconductor and anoxide film formed from an oxide of the group III nitride semiconductoris approximately three times as large as the bonding strength between,for example, a group III nitride semiconductor and a silicon oxide film.Accordingly, the adhesion between the insulating oxide film and thesubstrate or between the insulating oxide film and the active region ishigh in the first semiconductor device, so as to prevent the insulatingoxide film and the like from peeling off. As a result, the yield and thereliability of the semiconductor device can be improved.

In the first semiconductor device, a gate electrode, and a sourceelectrode and a drain electrode sandwiching the gate electrode arepreferably formed on the active region. In this manner, a field effecttransistor of the group III nitride semiconductor can be obtained.

In this case, the gate electrode preferably extends from the activeregion onto the insulating oxide film. In this manner, even when aportion of the gate electrode positioned on the insulating oxide film isused as an extended portion of the gate electrode, the extended portionis not in Schottky contact with the insulating oxide film formed byoxidizing the group III nitride semiconductor. Therefore, a leakagecurrent can be prevented from flowing in the extended portion, resultingin improving the reliability of the device.

The second semiconductor devices of this invention plural in the numbercomprise a group III nitride semiconductor formed in a plurality ofdevice formation regions each surrounded with a scribe region on asubstrate in a wafer state; and a protection oxide film formed in aperipheral portion of the scribe region on the substrate by oxidizingthe group III nitride semiconductor.

In the second semiconductor devices, in dividing the pluralsemiconductor devices formed on one wafer into chips, an insulating filmcovering the device formation region can be prevented from peeling offand cracks can be prevented from occurring in the device formationregion, resulting in improving the yield and the reliability of thedevices.

The third semiconductor device of this invention comprises a padelectrode formed on a substrate; and an insulating oxide film formedbetween the substrate and the pad electrode by oxidizing a group IIInitride semiconductor.

Since the bonding strength between a group III nitride semiconductor andan insulating oxide film formed from the group III nitride semiconductoris larger than the bonding strength between a group III nitridesemiconductor and a silicon oxide film or the like. Therefore, the padelectrode can be prevented from peeling off from the substrate in thethird semiconductor device, resulting in improving the yield and thereliability of the device.

The fourth semiconductor device of this invention comprises a laserstructure formed on a substrate and having a cavity including aplurality of group III nitride semiconductors; and a protection oxidefilm formed on side faces of the laser structure including facets of thecavity by oxidizing the group III nitride semiconductors.

In the fourth semiconductor device, a mirror face of a cavity mirror isnot an etched facet but is formed from an interface between the etchedfacet and the protection oxide film, and hence, the mirror face is neveraffected by a defect caused in etching. In addition, the group IIInitride semiconductor is directly oxidized, and hence, a leakage currentderived from a defective facet coating can be avoided, resulting inattaining high reliability.

The first method of fabricating a semiconductor device of this inventioncomprises a semiconductor layer forming step of forming a group IIInitride semiconductor layer on a substrate; a protection film formingstep of forming, on the group III nitride semiconductor layer, aprotection film for covering an active region of the group III nitridesemiconductor layer; an oxide film forming step of forming, in a regionon the substrate excluding the active region, an insulating oxide filmby oxidizing the group III nitride semiconductor layer with theprotection film used as a mask; and an active region exposing step ofexposing the active region by removing the protection film.

In the first method of fabricating a semiconductor device, theinsulating oxide film is formed in the region on the substrate excludingthe active region by oxidizing the group III nitride semiconductor layerwith the protection film used as a mask. Therefore, the firstsemiconductor device of this invention can be definitely fabricated.

The first method of fabricating a semiconductor device of this inventionpreferably further comprises, after the active region exposing step, anohmic electrode forming step of forming an ohmic electrode on the activeregion; and a gate electrode forming step of forming, on the activeregion, a gate electrode extending onto the insulating oxide film.

The first method of fabricating a semiconductor device of this inventionpreferably further comprises, between the semiconductor layer formingstep and the protection film forming step, an ammonia treatment step ofexposing the group III nitride semiconductor laser to ammonia. In thismanner, an oxide or the like remaining on the surface of a deviceformation region to be used as the active region is removed and cleanedby ammonia, and hence, the contact resistance ratio of the active regioncan be lowered. As a result, the electric characteristic of the devicecan be improved.

In this case, the ammonia treatment step preferably includes a sub-stepof changing the ammonia into plasma.

The second method of fabricating a semiconductor device of thisinvention comprises a semiconductor layer forming step of forming agroup III nitride semiconductor layer on a substrate in a wafer state; aregion setting step of setting, in the group III nitride semiconductorlayer, a plurality of device formation regions where devices are to beformed on the group III nitride semiconductor layer and a scribe regionfor used in dividing the substrate into chips respectively including thedevice formation regions; a protection film forming step of forming, onthe scribe region, a protection film for covering the scribe region; andan oxide film forming step of forming, in a region on sides of thescribe region on the substrate, a protection oxide film by oxidizing thegroup III nitride semiconductor layer with the protection film used as amask.

In the second method of fabricating a semiconductor device, since theprotection oxide film is formed on sides of the scribe region on thesubstrate, the second semiconductor device of this invention in whichthe insulating film covering the device formation region can beprevented from peeling off and cracks can be prevented from occurring inthe device formation region can be definitely fabricated.

In the first or second method of fabricating a semiconductor device, theprotection film is preferably formed from silicon, silicon oxide orsilicon nitride.

The third method of fabricating a semiconductor device of this inventioncomprises a semiconductor layer forming step of forming a group IIInitride semiconductor layer on a substrate; a region setting step ofsetting, in the group III nitride semiconductor layer, a deviceformation region where a device is to be formed on the group III nitridesemiconductor layer and a pad electrode formation region for externalconnection of the device to be formed in the device formation region; aprotection film forming step of forming a protection film covering aregion on the group III nitride semiconductor layer excluding the padelectrode formation region; an oxide film forming step of forming aninsulating oxide film in the pad electrode formation region on thesubstrate by oxidizing the group III nitride semiconductor layer withthe protection film used as a mask; and a step of forming a padelectrode on the insulating oxide film.

In the third method of fabricating a semiconductor device, theinsulating oxide film is formed in the pad electrode formation region onthe substrate by oxidizing the group III nitride semiconductor layerwith the protection film used as a mask. Accordingly, the thirdsemiconductor device of the invention can be definitely fabricated.

In any of the first through third methods of fabricating a semiconductordevice, the oxide film forming step preferably includes a sub-step ofconducting a thermal treatment on the group III nitride semiconductorlayer in an oxygen ambient.

In any of the first through third methods of fabricating a semiconductordevice, the oxide film forming step preferably includes a sub-step ofconducting a thermal treatment on the group III nitride semiconductorlayer with oxygen ions implanted.

The fourth method of fabricating a semiconductor device of thisinvention comprises a laser structure forming step of forming, on asubstrate, a laser structure having a cavity and including a pluralityof group III nitride semiconductor layers by forming the plurality ofgroup III nitride semiconductor layers; a step of exposing facets of thecavity of the laser structure; and an oxide film forming step of forminga protection oxide film on the facets by oxidizing side faces of thelaser structure including the facets.

In the fourth method of fabricating a semiconductor device, theprotection oxide film is formed on both side faces of the laserstructure including the facets of the cavity by oxidizing the group IIInitride semiconductor layers. Therefore, the fourth semiconductor deviceof the invention can be definitely fabricated. Also, since a procedurefor forming facet coating can be omitted, the fabrication can besimplified.

In the fourth method of fabricating a semiconductor device, the oxidefilm forming step preferably includes a sub-step of conducting a thermaltreatment on the group III nitride semiconductor layers in an oxygenambient.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A and 1B are diagrams of a GaN-based oxide-isolated HEMTaccording to Embodiment 1 of the invention, wherein FIG. 1A is a planeview thereof and FIG. 1B is a cross-sectional view thereof taken on lineIB-IB of FIG. 1A;

FIG. 2 is a graph for showing a voltage-current characteristic between aSchottky electrode formed on an insulating oxide film and an ohmicelectrode formed on an active region in the oxide-isolated HEMT ofEmbodiment 1;

FIG. 3 is a graph for showing gate voltage dependency of a drain currentin the oxide-isolated HEMT of Embodiment 1 and a conventionalmesa-isolated HEMT;

FIGS. 4A, 4B and 4C are cross-sectional views for showing procedures ina method of fabricating the oxide-isolated HEMT of Embodiment 1;

FIGS. 5A, 5B and 5C are cross-sectional views for showing otherprocedures in the method of fabricating the oxide-isolated HEMT ofEmbodiment 1;

FIG. 6 is a cross-sectional view of a multi-layer structure of GaN-basedsemiconductors in the oxide-isolated HEMT of Embodiment 1;

FIG. 7 is a graph for showing dependency on thermal treatment time ofthe thickness of the insulating oxide film in the oxide-isolated HEMT ofEmbodiment 1;

FIG. 8 is a graph for showing the relationship between the thickness ofthe insulating oxide film and a leakage current caused between elementsin the oxide-isolated HEMT of Embodiment 1;

FIGS. 9A, 9B and 9C show AES atomic profiles in a depth direction of asubstrate of the oxide-isolated HEMT of Embodiment 1, wherein FIG. 9A isa graph of the insulating oxide film obtained after conducting a thermaltreatment and removing a protection film, FIG. 9B is a graph of theactive region masked with the protection film and FIG. 9C is a graph forcomparison of the multi-layer structure not subjected to the thermaltreatment;

FIG. 10 is a graph for showing time dependency of the etching amount ofwet etching using nitric acid/hydrogen fluoride in the protection filmand the insulating oxide film conducted after the thermal treatment inthe oxide-isolated HEMT of Embodiment 1;

FIG. 11 is a graph for showing dependency on electrode spacing ofcontact resistance of the ohmic electrode with or without an ammoniatreatment in the oxide-isolated HEMT of Embodiment 1;

FIG. 12 is a cross-sectional view of a scribe region of a GaN-basedsemiconductor device in a wafer state according to Embodiment 2 of theinvention;

FIG. 13 is a graph for showing the relationship between a defectiveratio in a scribe process and the width of the scribe region in thesemiconductor device in a wafer state of Embodiment 2 and a conventionalsemiconductor device in a wafer state;

FIG. 14 is a cross-sectional view of a scribe region of a GaN-basedsemiconductor device in a wafer state according to a modification ofEmbodiment 2;

FIGS. 15A, 15B and 15C are cross-sectional views for showing proceduresin a method of fabricating the semiconductor device of Embodiment 2;

FIGS. 16A and 16B are cross-sectional views for showing other proceduresin the method of fabricating the semiconductor device of Embodiment 2;

FIG. 17 is a cross-sectional view of a pad electrode portion of aGaN-based semiconductor device according to Embodiment 3 of theinvention;

FIGS. 18A, 18B and 18C are cross-sectional views for showing proceduresin a method of fabricating the semiconductor device of Embodiment 3;

FIGS. 19A and 19B are cross-sectional views for showing other proceduresin the method of fabricating the semiconductor device of Embodiment 3;

FIGS. 20A and 20B are diagrams of a group III nitride semiconductorlaser diode according to Embodiment 4 of the invention, wherein FIG. 20Ais a perspective view thereof and FIG. 20B is a cross-sectional viewthereof taken on line XXB-XXB of FIG. 20A;

FIGS. 21A, 21B and 21C are diagrams for showing a method of fabricatingthe semiconductor laser diode of Embodiment 4, wherein FIG. 21A is across-sectional view attained after epitaxial growth, FIG. 21B is across-sectional view taken on line XXIB-XXIB of FIG. 21C and FIG. 21C isa front view of a laser structure;

FIGS. 22A, 22B, 22C and 22D are cross-sectional views for showing otherprocedures in the method of fabricating the semiconductor laser diode ofEmbodiment 4;

FIGS. 23A and 23B are diagrams of a conventional GaN-based semiconductordevice in a wafer state, wherein FIG. 23A is a plane view thereof andFIG. 23B is a cross-sectional view thereof taken on line XXIIIB-XXIIIBof FIG. 23A;

FIG. 24 is a cross-sectional view of a pseudo device for simulating aconventional mesa-isolated HEMT; and

FIG. 25 is a graph for showing a voltage-current characteristic betweena Schottky electrode and an ohmic electrode formed on an active regionof the pseudo device of FIG. 24.

DETAILED DESCRIPTION OF THE INVENTION Embodiment 1

Embodiment 1 of the invention will now be described with reference tothe accompanying drawings.

FIGS. 1A and 1B show an HEMT including a group III nitridesemiconductor, particularly, an oxide-isolated HEMT in which devices areisolated by a GaN-based oxide, according to Embodiment 1 of theinvention, wherein FIG. 1A is a plane view thereof and FIG. 1B is across-sectional view thereof taken on line IB-IB of FIG. 1A. As is shownin FIGS. 1A and 1B, the HEMT of this embodiment includes an activeregion 12A of a GaN-based semiconductor grown on a substrate 11 of, forexample, silicon carbide (SiC) and an insulating oxide film 12B formedaround the active region 12A by oxidizing the GaN-based semiconductor.

On the active region 12A, a gate electrode 13 in Schottky contact withthe active region 12A is formed so as to extend onto the insulatingoxide film 12B and have an extended portion 13 a on the insulating oxidefilm 12B, and ohmic electrodes 14 respectively serving as a sourceelectrode and a drain electrode are formed with space from the sideedges along the gate length direction of the gate electrode 13.

Now, a conventional mesa-isolated HEMT and the oxide-isolated HEMT ofthis embodiment will be compared in the voltage-current characteristicbetween the Schottky electrode and the ohmic electrode. FIG. 24 showsthe cross-sectional structure of a pseudo device simulating theconventional mesa-isolated HEMT. Specifically, on a substrate 121 ofSiC, an island-like active layer 122 of a GaN-based semiconductor, anisland-like ohmic electrode 123 formed on the active layer 122 and aSchottky electrode 124 in Schottky contact with the substrate with aspace from the active layer 122 are formed. In this case, the Schottkyelectrode 124 corresponds to the extended portion 104 a shown in FIG.23A. The pseudo device exhibits a rectified current characteristic as isshown in FIG. 25, and although the reverse breakdown voltage is large, aleakage current flows on the order of microampere (μA). In this manner,in the conventional mesa-isolated HEMT shown in FIGS. 23A and 23B, theextended portion 104 a of the gate electrode 104 is formed on the bufferlayer 102 of mesa-etched GaN. Therefore, the contact between theextended portion 104 a of the gate electrode 104 and the buffer layer102 is Schottky contact, so that a leakage current can easily flow.

On the other hand, in the oxide-isolated HEMT of this embodiment, thevoltage-current characteristic between the Schottky electrode 13 formedon the insulating oxide film 12B and the ohmic electrode 14 formed onthe active region 12A is shown in FIG. 2. Thus, even when a voltage of100 V or more is applied between these electrodes, merely a current onthe order of nanoampere (nA) flows.

FIG. 3 shows the gate voltage dependency of a drain current in theoxide-isolated HEMT of this embodiment and the conventionalmesa-isolated HEMT both having a gate width of 100 μm. Although there isno particular difference in a region where the gate voltage is so highthat a large drain current flows, there is a large difference in thevicinity of pinch-off where a small drain current flows. It is thusunderstood that the pinch-off characteristic is degraded in theconventional mesa-isolated HEMT owing to a leakage current caused in theextended portion 104 a of the gate electrode 104.

In this manner, in the oxide-isolated HEMT of this embodiment, a leakagecurrent can be avoided from flowing in the extended portion 13 a of thegate electrode differently from the conventional mesa-isolated HEMT, sothat the HEMT can attain a good pinch-off characteristic.

Furthermore, in the oxide-isolated HEMT of this embodiment, theinsulating oxide film 12B is formed by oxidizing the group III nitridesemiconductor (GaN) used for forming the active region 12A, andtherefore, a level difference like that of the mesa-isolated HEMT isnever caused in the boundary between the side edge portion of the activeregion 12A and the insulating oxide film 12B but the boundary is smooth.In the gate electrode 104 of the conventional HEMT, there is a fear ofthe so-called level disconnection that the gate electrode 104 isdisconnected due to a level difference between the side edge of theactive region 103 and the top face of the buffer layer 102 during, forexample, the fabrication. On the contrary, there is no fear of the leveldisconnection in this embodiment owing to the smooth boundary, resultingin attaining high reliability.

Although the HEMT is described in this embodiment, the same effects canbe attained in any device requiring isolation, such as a field effecttransistor (MESFET) and a hetero bipolar transistor (HBT).

Although the substrate of silicon carbide (SiC) is used in the HEMT ofthis embodiment, any substrate on which an active region of a group IIInitride semiconductor can be epitaxially grown, such as a sapphiresubstrate, may be used instead.

Now, a method of fabricating the oxide-isolated HEMT having theaforementioned structure will be described with reference to theaccompanying drawings.

FIGS. 4A through 4C and 5A through 5C are cross-sectional views forshowing procedures in the method of fabricating the oxide-isolated HEMTof this embodiment.

First, as is shown in FIG. 4A, a multi-layer structure 12 of GaN/AlGaNis formed on a substrate 11 of SiC by, for example, electron beamepitaxy (MBE). The detailed structure of the multi-layer structure 12will be described later.

Next, as is shown in FIG. 4B, a protection formation film of silicon(Si) is formed on the entire surface of the multi-layer structure 12 by,for example, chemical vapor deposition (CVD) or the MBE. Thereafter, theprotection formation film is patterned by lithography into a protectionfilm 21 covering an island-like active formation region 20 on themulti-layer structure 12.

Then, as is shown in FIG. 4C, with the protection film 21 formed on themulti-layer structure 12, a thermal treatment is carried out atapproximately 900° C. in an oxygen ambient for approximately 1 hour.Thus, a portion of the multi-layer structure 12 excluding an activeregion 12A is oxidized into an insulating oxide film 12B.

Subsequently, as is shown in FIG. 5A, the protection film 21 is removedby using nitric acid/hydrogen fluoride, so as to expose the activeregion 12A. Thereafter, as is shown in FIG. 5B, ohmic electrodes 14 oftitanium (Ti)/aluminum (Al) are selectively formed on the active region12A by deposition and lithography.

Next, as is shown in FIG. 5C, a gate electrode 13 of, for example,palladium (Pd)/titanium (Ti)/gold (Au) is selectively formed on theactive region 12A by the deposition and the lithography, so as to besandwiched by the ohmic electrodes 14 with space therebetween and toextend onto the insulating oxide film 12B. Thereafter, although notshown in the drawings, a protection insulating film of, for example, asilicon oxide film is formed above and around the active region 12Aincluding the gate electrode 13 and the ohmic electrodes 14. Then, padelectrodes of, for example, titanium (Ti)/gold (Au) respectivelyelectrically connected to the gate electrode 13 and the ohmic electrodes14 are formed on the protection insulating film.

In this manner, in the HEMT of this embodiment, isolation is provided bydirectly oxidizing the group III nitride semiconductor used for formingthe active region 12A. Next, the isolation characteristic between theactive region 12A and the insulating oxide film 12B formed as describedabove and the substrate characteristic of the active region 12A, whichare extremely significant for the operation characteristic of the HEMT,will be verified.

FIG. 6 is a cross-sectional view of a multi-layer structure 12 used forthe verification. The multi-layer structure 12 includes the followinglayers successively grown on a substrate 11: A buffer layer 31 ofaluminum nitride (AlN) with a thickness of approximately 100 nm; anactive layer 32 of intrinsic gallium nitride (GaN) with a thickness ofapproximately 3 μm; a first barrier layer 33 of intrinsic aluminumgallium nitride (AlGaN) with a thickness of approximately 2 nm; a secondbarrier layer 34 of n-type aluminum gallium nitride (AlGaN) with athickness of approximately 25 nm; and a third barrier layer 35 ofintrinsic aluminum gallium nitride (AlGaN) with a thickness ofapproximately 3 nm.

FIG. 7 shows the dependency on thermal treatment time of the thicknessof the insulating oxide film 12B formed by subjecting the multi-layerstructure 12 to a thermal treatment conducted at 900° C. in an oxygenambient. As is shown in FIG. 7, the thermal treatment carried out for 1hour results in forming an insulating oxide film with a thickness ofapproximately 100 nm, and the thermal treatment carried out for 4 hoursresults in forming an insulating oxide film with a thickness ofapproximately 200 nm. Since the total thickness of the barrier layers 33through 35 of the HEMT is approximately 30 nm as is shown in FIG. 6, theinsulating oxide film 12B with a thickness of approximately 100 nmsuffices.

FIG. 8 shows the relationship between the thickness of the insulatingoxide film 12B and a leakage current flowing between devices isolated bythe insulating oxide film. It is understood from FIG. 8 that asatisfactory isolation characteristic can be attained when theinsulating oxide film 12B has a thickness of 80 nm or more. Accordingly,as is obvious from FIGS. 7 and 8, when the thermal treatment is carriedout at 900° C., the devices can be sufficiently isolated by conductingthe thermal treatment approximately for 1 hour.

In forming the insulating oxide film 12B, the thermal treatment may becarried out, instead of in an oxygen ambient, with oxygen ions implantedinto the multi-layer structure 12.

Next, the substrate characteristic will be verified.

The substrate characteristic of the active region 12A should neverdegrade through the thermal treatment. Therefore, in order to avoidoxidation of the active region 12A through the thermal treatment, theprotection film 21 is formed from silicon (Si) in this embodiment.

FIGS. 9A through 9C show atomic profiles along a depth direction of thesubstrate of the HEMT of this embodiment obtained by Auger electronspectroscopy (AES) analysis. FIG. 9A shows the profile of the isolation(insulating oxide film 12B) obtained after conducting a thermaltreatment at 900° C. for 1 hour and removing the protection film 21,FIG. 9B shows the profile of the active region 12A masked with theprotection film 21 with a thickness of approximately 100 nm and FIG. 9Cshows, for comparison, the profile of the multi-layer structure 12 notsubjected to the thermal treatment. In these graphs, “Ga” indicates theprofile of gallium atoms, “N” indicates the profile of nitrogen atomsand “O” indicates the profile of oxygen atoms. Also, since attention ispaid to the profile of oxygen atoms in the multi-layer structure 12,aluminum atoms in a trace quantity are omitted. In these graphs, theabscissa indicates the depth (nm) from the surface of a sample and theordinate indicates a relative value (peak-to-peak).

As is shown in FIG. 9A, the structure of the multi-layer structure 12prior to the thermal treatment is largely broken in the isolation, sothat the oxygen atoms are diffused from the top face to the active layer32, resulting in forming the insulating oxide film 12B. In this case,the insulating oxide film 12B has a thickness of approximately 100 nm.

Furthermore, as is shown in FIG. 9B, in the active region 12A maskedwith the protection film 21 of Si, although the upper portion of theprotection film 21 is oxidized, there is no reaction on the interfacebetween the protection film 21 and the active region 12A. Thus, thestructure of the active region 12A prior to the thermal treatment is notchanged but kept as is understood from comparison with the profile ofFIG. 9C obtained without the thermal treatment.

Furthermore, Table 1 below shows the sheet carrier concentration and thecarrier mobility of the multi-layer structure 12 obtained before andafter the thermal treatment by a Hall measurement method at roomtemperature.

TABLE 1 Before thermal After thermal treatment treatment Carrierconcentration 1.4 × 10¹³ 1.5 × 10¹³ (cm⁻³) Mobility (cm²/Vs) 741 766

Neither of the sheet carrier concentration and the carrier mobility islargely changed before and after the thermal treatment. It is understoodalso from this result that the active region 12A is protected by theprotection film 21 as is understood from the result of the AES analysis.

Furthermore, the removing process of the protection film 21 after thethermal treatment is also significant in this invention. If theprotection film 21 cannot be completely removed or the active region 12Ais damaged in removing the protection film 21, the transistorcharacteristic is degraded. In addition, the insulating oxide film 12Bshould never be etched in removing the protection film 21.

Accordingly, the protection film 21 of Si is removed in this embodimentby wet etching using nitric acid/hydrogen fluoride.

FIG. 10 shows time dependency of the etching amount in the wet etchingusing nitric acid/hydrogen fluoride of the protection film 21 and theinsulating oxide film 12B after the thermal treatment. As is shown inFIG. 10, although the protection film 21 is easily etched, theinsulating oxide film 12B is minimally etched.

Although the protection film 21 is removed by the wet etching usingnitric acid/hydrogen fluoride in this embodiment, another etchant may beused instead. Alternatively, the etching may be carried out by dryetching.

Furthermore, although the protection film 21 is formed from silicon inthis embodiment, any other material capable of preventing degradation ofthe active region 12A through the thermal treatment, such as siliconoxide and silicon nitride, may be used instead. A solution includingfluoric acid such as buffered hydrogen fluoride (BHF) may be used as theetchant when the protection film is formed from silicon oxide, and asolution including phosphoric acid such as heated phosphoric acid may beused as the etchant when the protection film is formed from siliconnitride.

Modification of Embodiment 1

A method of fabricating a semiconductor device according to onemodification of Embodiment 1 will now be described with reference to theaccompanying drawing. The fabrication method of this modification ischaracterized by including an ammonia treatment process for exposing thetop face of the multi-layer structure 12 to plasma of an ammonia gasbetween the process for forming the multi-layer structure shown in FIG.4A and the process for forming the protection film shown in FIG. 4B.

FIG. 11 shows the result of evaluation of contact resistance of an ohmicelectrode 14 formed on an active region 12A obtained by a transmissionline method (TLM). In this evaluation, the ohmic electrode 14 has awidth of approximately 100 μm, and the spacing between the ohmicelectrodes 14 is set to 2 μm, 4 μm, 6 μm or 8 μm. The result obtainedwith the ammonia treatment of this modification carried out is shownwith a solid line, and the result obtained without the ammonia treatmentis shown with a broken line for comparison. As is shown in FIG. 11, theinclination of the line obtained with the ammonia treatment issubstantially the same as that of the line obtained without the ammoniatreatment, which reveals that there is no difference in the sheetresistance of the active region 12A between these cases. On thecontrary, the contact resistance is lowered by approximately 30% whenthe ammonia treatment is carried out as compared with when it is notcarried out. The contact resistance ratio obtained based on this graphis 6×10⁻⁶ Ωcm², which is a satisfactory value, even when the ammoniatreatment is not carried out, and is as low as 3×10⁻⁶ Ωcm² when theammonia treatment is carried out. This is because altered substancessuch as an oxide present on the active region 12A are removed andcleaned by the ammonia treatment.

Although the ammonia treatment is carried out by using plasma of anammonia gas in this modification, the ammonia treatment may be carriedout by boiling the multi-layer structure in an ammonia solution.

Embodiment 2

Embodiment 2 of the invention will now be described with reference tothe accompanying drawings.

FIG. 12 shows the cross-sectional structure of a scribe region of aGaN-based semiconductor device of Embodiment 2. The GaN-basedsemiconductor device of this embodiment is characterized by including aprotection oxide film formed by oxidizing a GaN-based semiconductoritself in the periphery of a scribe region used in scribing a waferbearing a plurality of semiconductor devices into chips including therespective semiconductor devices. As is shown in FIG. 12, the principalplane of a substrate 42 of, for example, SiC in a wafer state ispartitioned into chip formation regions 40 and a scribe region 41provided between the chip formation regions 40.

In the scribe region 41 on the principal plane of the substrate 42, amulti-layer structure 43A of GaN-based semiconductors to be used as anactive layer for a transistor or the like in a device formation region(not shown) formed at the center of the chip formation region 40 isformed. In a peripheral portion of the scribe region 41 on the principalplane in the vicinity of the chip formation region 40, a protectionoxide film 43B formed by oxidizing the multi-layer structure 43A isformed and an insulating film 44 of a silicon oxide film or the likeserving as a surface protection film is formed on the protection oxidefilm 43B.

In a conventional GaN-based semiconductor device, a peripheral portionof a scribe region 41 is covered with an insulating film 44 of a siliconoxide film or the like having comparatively small bonding strength witha GaN-based semiconductor, and hence, the insulating film 44 is easilypeeled off during scribing (division into chips). The insulating film 44of this embodiment is formed on the protection insulating film 43Bformed by oxidizing the GaN-based semiconductor having comparativelyhigh bonding strength with the insulating film 44, and hence, occurrenceof cracks in the multi-layer structure 43A and the substrate 42 andpeeling of the insulating film 44 can be avoided in dividing thesubstrate 42 into chips.

FIG. 13 shows the relationship, in the semiconductor device in a waferstate of this embodiment and a conventional semiconductor device in awafer state, between the defective ratio in scribing and the width ofthe scribe region. Through observation of the surface of each chipobtained when the scribe region has a width of 100 μm, it is found, inthe conventional semiconductor chips, that defects are caused inapproximately 20% of samples, specifically, a crack caused in amulti-layer structure in the scribe region reaches the peripheralportion or inside of the chip, and the insulating film on the deviceformation region is peeled off.

In contrast, through observation of the surface of the chips of thesemiconductor devices of this embodiment, it is found that a crackcaused in the multi-layer structure 43A in the scribe region 41 stopsaround the boundary with the protection oxide film 43B so as not toreach the chip formation region 40.

As is understood from FIG. 13, since the protection oxide film 43Aformed by oxidizing the GaN-based semiconductor is formed in theperipheral portion of the scribe region 41, even when the scribe region41 has a width as small as approximately 100 μm, the defective ratio islower than that in a conventional semiconductor device having a scriberegion with a width of 150 μm. As a result, since the defective ratio inscribing can be suppressed in the semiconductor devices of thisembodiment even when the width of the scribe region 41 is small, thenumber of semiconductor devices obtained from one substrate 42 (wafer)can be increased. In addition, the insulating film 44 can be preventedfrom peeling off, resulting in largely improving the reliability of thedevices.

Although the protection oxide film 43B is formed also in the chipformation region 40 in this embodiment, a protection oxide film 43C maybe formed instead in a circular shape along the edge of the scriberegion 41 as a modification as is shown in FIG. 14. In this case, theprotection oxide film 43C with a width of approximately 5 μm suffices.

Although the substrate 42 is formed from SiC in this embodiment, anysubstrate on which the multi-layer structure 43A of GaN-basedsemiconductors can be epitaxially grown, such as a sapphire substrate,may be used instead.

Now, a method of fabricating the semiconductor device having theaforementioned structure will be described with reference to theaccompanying drawings.

FIGS. 15A through 15C, 16A and 16B are cross-sectional views for showingprocedures in the method of fabricating the semiconductor device of thisembodiment.

First, as is shown in FIG. 15A, a multi-layer structure 43A of GaN/AlGaNis formed on a wafer-like substrate 42 of SiC by, for example, theelectron beam epitaxy (MBE).

Next, as is shown in FIG. 15B, plural chip formation regions 40 and ascribe region 41 between the plural chip formation regions 40 areformed. In the scribe region 41, a protection formation film of Si isformed on the multi-layer structure 43A by the CVD or the like, and theprotection formation film is patterned by the lithography into aprotection film 21 covering the scribe region 41 on the substrate 42.

Then, as is shown in FIG. 15C, with the protection film 21 formed on themulti-layer structure 43A, a thermal treatment is carried out atapproximately 900° C. in an oxygen ambient for approximately 1 hour.Thus, portions of the multi-layer structure 43A positioned in the chipformation regions 40 on both sides of the scribe region 41 are oxidizedinto protection oxide films 43B.

The protection oxide film 43B may be formed before or after forming asemiconductor device such as a transistor in a device formation region(not shown) at the center of the chip formation region 40, whereas it ispreferably formed before forming the semiconductor device for attaininga good device characteristic because the thermal treatment is carriedout at a comparatively high temperature. In this case, the protectionoxide film 43B may be formed in the same procedure for forming theprotection film 21 shown in FIG. 4C described in Embodiment 1.

Subsequently, as is shown in FIG. 16A, the protection film 21 is removedby using nitric acid/hydrogen fluoride, and then, as is shown in FIG.16B, an insulating film 44 of, for example, silicon oxide for surfaceprotection is formed on the entire surface of the chip formation regions40 by the CVD or the like. Then, the insulating film 44 is selectivelyetched by the lithography so as to expose the multi-layer structure 43Ain the scribe region 41.

In this manner, since the protection oxide film 43B is formed from anoxide of the multi-layer structure 43A of GaN-based semiconductors inthis embodiment; the adhesion between the substrate 42 and theinsulating film 44 is high. Also, since the multi-layer structure 43Aand the protection oxide film 43B are continuously formed in the scriberegion 41, even when a crack is caused in the protection oxide film 43Bin scribing the substrate 42, the crack can be prevented from reachingthe peripheral portion or inside of the chip formation region 40.

Although the protection film 21 used in masking the portion of themulti-layer structure 43A in the scribe region 41 for forming theprotection oxide film 43B is formed from silicon in this embodiment, theprotection film 21 may be formed from any material capable of preventingdegradation of the multi-layer structure 43A through the thermaltreatment, such as silicon oxide and silicon nitride.

Although the protection film 21 is removed by the wet etching usingnitric acid/hydrogen fluoride, another etchant may be used.Alternatively, the etching can be carried out by dry etching.

Furthermore, the thermal oxidation process for forming the protectionoxide film 43B may be carried out, instead of in an oxygen ambient, byimplanting oxygen ions into the multi-layer structure 43A of theGaN-based semiconductors.

Embodiment 3

Embodiment 3 of the invention will now be described with reference tothe accompanying drawings.

FIG. 17 shows the cross-sectional structure of a pad electrode portionserving as an external input/output terminal of a GaN-basedsemiconductor device of Embodiment 3. As is shown in FIG. 17, theprincipal plane of a wafer-like substrate 52 of, for example, SiC ispartitioned into device formation regions 50 and a pad electrodeformation region 51 adjacent to the device formation region 50.

In the device formation region 50 on the principal plane of thesubstrate 52, a multi-layer structure 53A of GaN-based semiconductorsserving as an active layer of a transistor or the like is formed, and inthe pad electrode formation region 51, an insulating oxide film 53Bformed by oxidizing the multi-layer structure 53A and a pad electrode 54of, for example, titanium (Ti)/gold (Au) disposed on the insulatingoxide film 53B are formed. Although not shown in the drawing, it goeswithout saying that the pad electrode 54 is electrically connected to adevice (not shown) formed in the device formation region 50 through awire.

In this manner, the pad electrode 54 of this embodiment is formed abovethe multi-layer structure 53A of GaN-based semiconductors with theinsulating oxide film 53B formed by oxidizing the multi-layer structure53A sandwiched therebetween, and hence, adhesion between the padelectrode 54 and the substrate 52 can be improved. Accordingly, forexample, the pad electrode 54 can be prevented from peeling off from thesubstrate 52 in wire-bonding the pad electrode 54.

Table 2 below shows results of quantitatively evaluating adhesion of aGaN layer epitaxially grown on a substrate of SiC to a variety of thinfilm materials and adhesion of an oxide film formed by oxidizing anupper portion of the GaN layer to a variety of thin film materials. Thisevaluation is made by a Sebastian method.

TABLE 2 Tensile load Sample structures (×9.8 N/cm²) Silicon oxide filmon GaN layer 350 Silicon nitride film on GaN layer 320 GaN oxide layeron GaN 1080 Ti/Au multi-layer structure on GaN oxide layer 850 Al on GaNoxide layer 830 Silicon oxide film on GaN oxide layer 920 Siliconnitride film on GaN oxide layer 900

It is understood from Table 2 that an insulating film having highadhesion on a GaN layer is merely a GaN oxide layer formed by oxidizinga GaN layer. Furthermore, it is understood that a GaN oxide layer hashigh adhesion to not only a metal material but also an insulating filmincluding silicon. Accordingly, a pad electrode portion required to havehigh adhesion is very effectively formed on the insulating oxide film53B obtained by oxidizing the multi-layer structure 53A of GaN-basedsemiconductors.

Although the substrate 52 is made from SiC in this embodiment, anysubstrate on which the multi-layer structure 53A of GaN-basedsemiconductors can be epitaxially grown, such as a sapphire substrate,may be used instead.

Now, a method of fabricating the pad electrode portion of asemiconductor device having the aforementioned structure will bedescribed with reference to the accompanying drawings.

FIGS. 18A through 18C, 19A and 19B are cross-sectional views for showingprocedures in the method of fabricating the pad electrode portion of asemiconductor device of this embodiment.

First, as is shown in FIG. 18A, a multi-layer structure 53A of GaN/AlGaNis formed on a substrate 52 of SiC by, for example, the electron beamepitaxy (MBE).

Next, as is shown in FIG. 18B, the entire surface of the multi-layerstructure 53A is partitioned into device formation regions 50 and padelectrode formation regions 51. Subsequently, in the device formationregion 50, a protection formation film of Si is formed on themulti-layer structure 53A by the CVD or the like. Thereafter, theprotection formation film is patterned by the lithography into aprotection film 21 covering the device formation region 50 on thesubstrate 52.

Then, as is shown in FIG. 18C, with the protection film 21 formed on themulti-layer structure 53A, a thermal treatment is carried out atapproximately 900° C. in an oxygen ambient for approximately 1 hour,thereby oxidizing a portion of the multi-layer structure 53A in the padelectrode formation region 51 into an insulating oxide film 53B.

The insulating oxide film 53B may be formed before or after forming asemiconductor device such as a transistor in the device formation region50, whereas it is preferably formed before forming the device forattaining a good device characteristic because the thermal treatment iscarried out at a comparatively high temperature. In this case, theinsulating oxide film 53B is formed in the same procedure for formingthe protection film 21 shown in FIG. 4C of Embodiment 1 or shown in FIG.15C of Embodiment 2.

Subsequently, as is shown in FIG. 19A, the protection film 21 is removedby using nitric acid/hydrogen fluoride, and then, as is shown in FIG.19B, a pad electrode 54 of Ti/Au is selectively formed on the insulatingoxide film 53B in the pad electrode formation region 51 by, for example,the deposition and the lithography.

In this manner, the pad electrode 54 is formed on the insulating oxidefilm 53B obtained by oxidizing the multi-layer structure 53A ofGaN-based semiconductors in this embodiment, and hence, high adhesioncan be attained.

Although the pad electrode 54 is directly formed on the insulating oxidefilm 53B in this embodiment, an insulating film such as a silicon oxidefilm and a silicon nitride film may be disposed between the padelectrode 54 and the insulating oxide film 53B of an oxide of theGaN-based semiconductors because an insulating film including siliconhas high adhesion to the oxide of the GaN-based semiconductors as isshown in Table 2.

Although the protection film 21 for protecting a portion of themulti-layer structure 53A in the device formation region 50 is made fromsilicon in this embodiment, any material capable of preventingdegradation of the multi-layer structure 53A through the thermaltreatment, such as a silicon oxide film and a silicon nitride film, maybe used instead.

Although the protection film 21 is removed by the wet etching usingnitric acid/hydrogen fluoride in this embodiment, another etchant may beused. Alternatively, the etching can be carried out by dry etching.

Furthermore, the insulating oxide film 53B may be formed, instead of inan oxygen ambient, by implanting oxygen ions into the multi-layerstructure 53A.

Embodiment 4

Embodiment 4 of the invention will now be described with reference tothe accompanying drawings.

FIGS. 20A and 20B show a group III nitride semiconductor laser diodeaccording to Embodiment 4 of the invention, wherein FIG. 20A is aperspective view thereof and FIG. 20B is a cross-sectional view thereoftaken on line XXB-XXB of FIG. 20A. As is shown in FIG. 20A, thesemiconductor laser diode of this embodiment includes the followinglayers successively formed on a substrate 61 of sapphire having theprincipal plane of the (0001) surface orientation: An n-type contactlayer 62 of n-type gallium nitride (GaN); an n-type cladding layer 63 ofn-type aluminum gallium nitride (AlGaN); an active layer 64 of galliumindium nitride (GaInN); a p-type cladding layer 65 of p-type aluminumgallium nitride (AlGaN); and a p-type contact layer 66. In this manner,the semiconductor laser diode has a laser structure 60A including acavity of doublehetero junction in which the active layer 64 includingIn is vertically sandwiched between the n-type cladding layer 63 and thep-type cladding layer 65 including Al.

In this case, as is shown in FIGS. 20A and 20B, a direction in which anemitting facet 60 a opposes a reflecting facet 60 b of the laserstructure 60A corresponds to a lasing direction of a laser beam in thecavity.

Also, as is shown in FIG. 20A, on the p-type contact layer 66, a p-sideelectrode 67 of, for example, nickel (Ni)/gold (Au) is formed. On theother hand, a part of the n-type contact layer 62 is exposed, so that ann-side electrode 68 of, for example, titanium (Ti)/aluminum (Al) can beformed on the exposed surface.

As a characteristic of the semiconductor laser diode of this embodiment,as is shown in the cross-sectional view of FIG. 20B along the emittingdirection of a laser beam, the emitting facet 60 a and the reflectingfacet 60 b working as cavity mirrors in the laser structure 60A areformed by etching the n-type cladding layer 63, the active layer 64 andthe p-type cladding layer 65 in a direction vertical to the principalplane of the substrate 61, and the etched facets are covered with aprotection oxide film 70 formed by oxidizing the facets. Accordingly, asubstantial cavity facet corresponds to the interface between the end ofthe active layer 64 and the protection oxide film 70.

Since the cavity mirror does not remain as the etched facet but iscovered with the protection oxide film 70 in this manner, thesemiconductor laser diode of this embodiment is minimally affected bydefects or the like caused in the etching. Furthermore, the protectionoxide film 70 is formed by directly oxidizing the semiconductor layersincluded in the laser structure 60A, and hence, no leakage current iscaused, resulting in attaining high reliability.

Moreover, since there is no need to provide a coating on the cavityfacet in the semiconductor laser diode of this embodiment, the number offabrication processes can be reduced. It is necessary to optimize thereflectance of a laser beam on the emitting facet and the reflectingfacet by adjusting the thickness of the protection oxide film 70 or thelike.

Now, a method of fabricating the semiconductor laser diode having theaforementioned structure will be described with reference to theaccompanying drawings.

FIGS. 21A through 21C and 22A through 22D are cross-sectional views forshowing procedures in the method of fabricating the semiconductor laserdiode of this embodiment. In these drawings, the cross-sectionalstructure taken on line XXB-XXB of FIG. 20A is shown, whereas FIG. 21Cis a front view.

First, as is shown in FIG. 21A, an n-type contact layer 62, an n-typecladding layer 63, an active layer 64, a p-type cladding layer 65 and ap-type contact layer 66 are successively grown on a substrate 61 ofsapphire by, for example, the metal organic vapor phase epitaxy (MOVPE).

Next, as is shown in the cross-sectional view of FIG. 21B and the frontview of FIG. 21C, the p-type contact layer 66, the p-type cladding layer65, the active layer 64 and the n-type cladding layer 63 are etched witha laser structure formation region 60 masked by, for example, electroncyclotron resonance (ECR) etching until the n-type contact layer 62 isexposed. Thus, a laser structure 60A including the n-type contact layer62, the n-type cladding layer 63, the active layer 64, the p-typecladding layer 65 and the p-type contact layer 66 is formed, and ann-side electrode formation region 68A is formed in the n-type contactlayer 62.

Then, as is shown in the cross-sectional view of FIG. 22A, a protectionfilm 21 of silicon (Si) is selectively formed so as to cover a p-sideelectrode formation region 67A and the n-side electrode formation region(not shown).

Subsequently, as is shown in FIG. 22B, with the protection film 21formed on the laser structure 60A, a thermal treatment is carried out atapproximately 900° C. in an oxygen ambient for approximately 1 hour,thereby forming a protection oxide film 70 on the top face and sidefaces excluding the p-side electrode formation region 67A and the n-sideelectrode formation region of the laser structure 60A by oxidizingcorresponding portions of the laser structure 60A.

Next, as is shown in FIG. 22C, the protection film 21 is removed byusing nitric acid/hydrogen fluoride, thereby exposing the p-sideelectrode formation region 67A on the p-type contact layer and then-side electrode formation region.

Then, as is shown in FIG. 22D, a p-side electrode 67 is formed in thep-side electrode formation region 67A, and an n-side electrode is formedin the n-side electrode formation region. In this manner, thesemiconductor laser diode of FIG. 20A is completed.

In the fabrication method of this embodiment, since the GaN-basedsemiconductor layers included in the laser structure 60A and theiretched facets are oxidized, there is no need to provide coatings on theemitting facet 60 a and the reflecting facet 60 b, and the cavitymirrors can be formed on the interfaces between the protection oxidefilm 70 and the laser structure 60A.

In the semiconductor laser diode of this embodiment, the active layer 64may be formed into a striped shape or the p-type cladding layer 65 maybe provided with a current confining layer in order to improvecontrollability in the lateral mode of the laser beam.

Although the protection film 21 for masking the p-side electrodeformation region 67A and the n-side electrode formation region 68A informing the protection oxide film 70 is made from silicon in thisembodiment, any material capable of preventing degradation of the p-typecontact layer 66 and the n-type contact layer 62 through the thermaltreatment, such as a silicon oxide film and a silicon nitride film, maybe used instead.

Although the protection film 21 is removed by the wet etching usingnitric acid/hydrogen fluoride in this embodiment, another etchant may beused. Alternatively, the etching can be carried out by dry etching.

Although the substrate 61 is made from sapphire in this embodiment, anyother substrate on which GaN-based semiconductor layers can beepitaxially grown, such as SiC, may be used instead of the sapphiresubstrate.

1. A semiconductor device comprising: an active region formed on asubstrate from a group III nitride semiconductor; and an insulatingoxide film formed in a peripheral portion of said active region on saidsubstrate by oxidizing said group III nitride semiconductor.
 2. Thesemiconductor device of claim 1, wherein a gate electrode, and a sourceelectrode and a drain electrode sandwiching said gate electrode areformed on said active region.
 3. The semiconductor device of claim 2,wherein said gate electrode extends from said active region onto saidinsulating oxide film.
 4. A plurality of semiconductor devicescomprising: a group III nitride semiconductor formed in a plurality ofdevice formation regions each surrounded with a scribe region on asubstrate in a wafer state; and a protection oxide film formed in aperipheral portion of said scribe region on said substrate by oxidizingsaid group III nitride semiconductor.
 5. A semiconductor devicecomprising: a pad electrode formed on a substrate; and an insulatingoxide film formed between said substrate and said pad electrode byoxidizing a group III nitride semiconductor.
 6. A semiconductor devicecomprising: a laser structure formed on a substrate and having a cavityincluding a plurality of group III nitride semiconductors; and aprotection oxide film formed on side faces of said laser structureincluding facets of said cavity by oxidizing said group III nitridesemiconductors.